| PART |
Description |
Maker |
| 2673000101 |
Lower Frequencies < 50 MHz
|
Fair-Rite Products Corp.
|
| 2643022401 |
Broadband Frequencies 25-300 MHz
|
Fair-Rite Products Corp.
|
| BAR15 BAR16 BAR14 |
RF switch RF attenuator for frequencies above 10 MHz Low distortion factor
|
TY Semiconductor Co., Ltd
|
| BAR17 |
RF switch RF attenuator for frequencies above 1 MHz Low distortion factor
|
TY Semiconductor Co., Ltd
|
| CA3127E CA3127F CA3127H |
High-freguency N-P-N transistor array. For low-power applications at frequencies up to 500 MHz.
|
General Electric Solid State
|
| CLY10 Q62702-L94 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) 砷化镓场效应管（功率放大器，对于00兆赫2.5千兆赫频率的移动电话
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CLY15 Q62702-L99 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) 砷化镓场效应管（功率放大器，对于00兆赫2.5千兆赫频率的移动电话
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF6G22L-40BN |
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| 3308-1350 |
KR Electronics part number 3308-1350 is a 1350 MHz lowpass filter module Other cutoff frequencies are available
|
KR Electronics, Inc.
|
| BAR61 BAR60 Q62702-A786 Q62702-A120 |
Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) SILICON, PIN DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
